q?v~zy??q?v?_rb]???qcabbq HFS840 2 1 3 bv dss = 500 v r ds(on) typ
i d = 9.0 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 25 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified HFS840 500v n-channel mosfet symbol parameter value units v dss drain-source voltage 500 v i d drain current ? continuous (t c = 25 zq 9.0* a drain current ? continuous (t c = 100 zq 5.4* a i dm drain current ? pulsed (note 1) 36* a v gs gate-source voltage daq v e as single pulsed avalanche energy (note 2) 360 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 13.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcf q 44 w 0.35 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q symbol parameter typ. max. units r jc junction-to-case -- 2.86 `?q r ja junction-to-ambient -- 62.5 sep 2011 to-220f 1.gate 2. drain 3. source * drain current limited by maximum junction temperature
q?v~zy??q?v?_rb]???qcabbq HFS840 notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=8mh, i as =9.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 9.0 a i sm pulsed source-drain diode forward current -- -- 36 v sd source-drain diode forward voltage i s = 9.0 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 9.0 a, v gs = 0 v di f g w $ v (note 4) -- 335 -- q qrr reverse recovery charge -- 2.95 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3q 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a q -- 0.7 0.85 q on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3q 500 -- -- v ) bv dss / ) t j breakdown voltage temperature coefficient i d = 250 3]q?????????q?cf q -- 0.57 -- ?` q i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v q -- -- 1 3q v ds = 400 v, t c = 125 q -- -- 10 3q i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 2q i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 2q off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz q -- 1000 1300 ?q c oss output capacitance -- 130 170 ?q c rss reverse transfer capacitance -- 20 26 ?q dynamic characteristics t d(on) turn-on time v ds = 250 v, i d = 9.0 a, r g = 25 q q qqqqqqqqqqqqqqqqqqqqqqqqqqqq y??qe]fzq -- 25 50 q t r turn-on rise time -- 60 120 q t d(off) turn-off delay time -- 130 260 q t f turn-off fall time -- 90 180 q q g total gate charge v ds = 400v, i d = 9.0 a, v gs = 10 v y??qe]fzq -- 25 33 ?tq q gs gate-source charge -- 6 -- ?tq q gd gate-drain charge -- 12 -- ?tq switching characteristics source-drain diode maximum ratings and characteristics
q?v~zy??q?v?_rb]???qcabbq HFS840 typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 9.0 a v gs , gate-source voltage [v] q g , total gate charge [nc]
q?v~zy??q?v?_rb]???qcabbq HFS840 typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 2.86 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rb]???qcabbq HFS840 fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]???qcabbq HFS840 fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]???qcabbq HFS840 package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g
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